This part is a kind of semiconductor called TK80A08K3.

Function of this product has Field Effect Transistor.

Manufacturers : Toshiba Semiconductor

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Some of the text within the PDF file :

TK80A08K3 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (U-MOSⅣ) TK80A08K3 Switching Regulator Applications • • • • Low drain-source ON-resistance: RDS (ON) = 3.6 mΩ (typ.) High forward transfer admittance: |Yfs| = 200 S (typ.) Low leakage current: IDSS = 10 μA (max) (VDS = 75 V) Enhancement mode: Vth = 2.0 to 4.0 V (VDS = 10 V, ID = 1 mA) Unit: mm Absolute Maximum Ratings (Ta = 25°C) Characteristics Drain-source voltage Drain-gate voltage (RGS = 20 kΩ) Gate-source voltage Drain current DC Pulse (Note 1) (Note 1) Symbol VDSS VDGR VGSS ID IDP PD EAS IAR EAR Tch Tstg Rating 75 75 ± 20 80 320 40 443 80 4 150 −55 to 150 Unit V V V A W mJ A mJ °C °C 1: Gate 2: Drain 3: Source Drain power dissipation (Tc = 25°C) Single pulse avalanche energy (Note 2) Avalanch [ ... ]

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