This part is a kind of semiconductor called TM2314FN.

Function of this product has N-Channel High Density Trench MOSFET.

Manufacturers : TECH MOS

Image and pinout :

Some of the text within the PDF file :

TECH MOS Technology. N-Channel High Density Trench MOSFET TM2314FN PRODUCT SUMMARY VDSS ID 5.4 20V 4.3 46 @ VGS = 2.5V RDS(on) (m-ohm) Max 30 @ VGS = 4.5V FEATURES ●Super high dense cell trench design for low RDS(on). ●Rugged and reliable. ●Surface Mount package. D SOT-23-3L D S G S G ABSOLUTE MAXIMUM RATINGS (TA = 25 °C unless otherwise noted) Parameter Drain-Source Voltage Gate-Source Voltage Drain Current-Continuous @ TA = 25 °C -Pulse b Drain-Source Diode Forward Current Maximum Power Dissipation a a a Symbol VDS VGS ID IDM IS PD TJ,TSTG Limit 20 ± 12 5.4 21.5 1.7 1.25 0.75 - 55 to 150 Unit V V A A A W °C TA=25°C TA=75°C Operating Junction and Storage Temperature Range THERMAL CHARACTERISTICS Thermal Resistance,Junction-to-Ambient Note a. Surface Mounted on FR4 [ ... ]

TM2314FN PDF Datasheet Download