This part is a kind of semiconductor called IXDH20N120D1.
Function of this product has High Voltage IGBT with optional Diode.
Manufacturers : IXYS Corporation
Image and pinout :
Some of the text within the PDF file :
High Voltage IGBT with optional Diode Short Circuit SOA Capability Square RBSOA IXDH 20N120 VCES = 1200 V = 38 A IXDH 20N120 D1 IC25 VCE(sat) typ = 2.4 V C G G C TO-247 AD G C E IXDH 20N120 E IXDH 20N120 D1 E C (TAB) G = Gate, C = Collector , E = Emitter TAB = Collector Symbol VCES VCGR VGES VGEM IC25 IC90 ICM RBSOA tSC (SCSOA) PC TJ Tstg Conditions TJ = 25°C to 150°C TJ = 25°C to 150°C; RGE = 20 kW Continuous Transient TC = 25°C TC = 90°C TC = 90°C, tp = 1 ms VGE = ±15 V, TJ = 125°C, RG = 82 W Clamped inductive load, L = 30 µH VGE = ±15 V, VCE = VCES, TJ = 125°C RG = 82 W, non repetitive TC = 25°C IGBT Diode Maximum Ratings 1200 1200 ±20 ±30 38 25 50 ICM = 35 VCEK < VCES 10 200 75 -55 ... +150 -55 ... +150 300 0.8 - 1.2 6 V V V V A A A A Features q q q q q q [ ... ]