This part is a kind of semiconductor called 2PG009.
Function of this product has Silicon N-Channel Enhancement IGBT.
Manufacturers : Panasonic
Image and pinout :
Some of the text within the PDF file :
This product complies with the RoHS Directive (EU 2002/95/EC). IGBT 2PG009 Silicon N-channel enhancement IGBT For plasma display panel drive For high speed switching circuits Features Low collector-emitter saturation voltage: VCE(sat) < 2.5 V High-speed switching: tf = 185 ns (typ.) Package Code TO-220D-A1 Marking Symbol: 2PG009 Pin Name 1. Gate 2. Collector 3. Emitter Collector-emitter voltage (E-B short) Gate-emitter voltage (E-B short) Collector current Peak collector current * Power dissipation VCES IC VGES ICP PC Tj Ta = 25°C Junction temperature Storage temperature Tstg Note) *: Assurance of repetitive pulse. (Repetitive period ≤ 5 ms on-duty ≤ 20%) But, it must stay within 40% of all that the time impressed pulse repetitively. T ≤ 5.0 [ ... ]