This part is a kind of semiconductor called 2N7000.

Function of this product has CASE 29-04/ STYLE 22 TO-92 (TO-226AA).

Manufacturers : Motorola Inc

Image and pinout :

Some of the text within the PDF file :

MOTOROLA SEMICONDUCTOR TECHNICAL DATA Order this document by 2N7000/D TMOS FET Transistor N–Channel — Enhancement 3 DRAIN 2 GATE 1 SOURCE 2N7000 Motorola Preferred Device MAXIMUM RATINGS Rating Drain Source Voltage Drain–Gate Voltage (RGS = 1.0 MΩ) Gate–Source Voltage — Continuous — Non–repetitive (tp ≤ 50 µs) Drain Current Continuous Pulsed Total Power Dissipation @ TC = 25°C Derate above 25°C Operating and Storage Temperature Range Symbol VDSS VDGR VGS VGSM ID IDM PD TJ, Tstg Value 60 60 ± 20 ± 40 200 500 350 2.8 – 55 to +150 mW mW/°C °C Unit Vdc Vdc Vdc Vpk mAdc CASE 29–04, STYLE 22 TO–92 (TO–226AA) 1 2 3 THERMAL CHARACTERISTICS Characteristic Thermal Resistance, Junction to Ambient Maximum Lead Temperature for Soldering Purposes, 1/16″ from case [ ... ]

2N7000 PDF Datasheet Download