This part is a kind of semiconductor called AON5810.

Function of this product has Common-Drain Dual N-Channel Enhancement Mode Field Effect Transistor.

Manufacturers : Alpha & Omega Semiconductors

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AON5810 Common-Drain Dual N-Channel Enhancement Mode Field Effect Transistor General Description The AON5810 uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate voltages as low as 1.8V while retaining a 12V VGS(MAX) rating. It is ESD protected. This device is suitable for use as a uni-directional or bidirectional load switch, facilitated by its common-drain configuration. Standard Product AON5810 is Pb-free (meets ROHS & Sony 259 specifications). AON5810L is a Green Product ordering option. AON5810 and AON5810L are electrically identical. Features VDS (V) = 20V ID = 7.7 A (VGS = 4.5V) RDS(ON) < 18 mΩ (VGS = 4.5V) RDS(ON) < 19 mΩ (VGS = 4.0V) RDS(ON) < 21 mΩ (VGS = 3.1V) RDS(ON) < 25 mΩ (VGS = 2.5V) RDS(ON) < 40 mΩ (VGS = 1.8V) ES [ ... ]

AON5810 PDF Datasheet Download