This part is a kind of semiconductor called 2SK2596.

Function of this product has Silicon N-Channel MOS FET UHF Power Amplifier.

Manufacturers : Renesas Technology

Image and pinout :

Some of the text within the PDF file :

2SK2596 Silicon N-Channel MOS FET UHF Power Amplifier REJ03G0207-0300 (Previous ADE-208-1367(Z)) Rev.3.00 Feb.14.2005 Features • High power output, High gain, High efficiency PG = 12.2 dB, Pout = 30.2 dBm, ηD = 45%min. (f = 836.5 MHz) • Compact package capable of surface mounting Outline PLZZ0004CA-A (Previous code : UPAK) D 2 3 G 1 1. Gate 2. Source 3. Drain 4. Source 4 S Note: Marking is “BX“. This Device is sensitive to Electro Static Discharge. An Adequate handling procedure is requested. Absolute Maximum Ratings (Ta = 25°C) Item Drain to source voltage Gate to source voltage Drain current Drain peak current Channel dissipation Channel temperature Storage temperature Notes: 1. PW ≤ 10 µs, duty cycle ≤ 1% 2. Value at Tc = 25°C Symbol VDS [ ... ]

2SK2596 PDF Datasheet Download