This part is a kind of semiconductor called 2SK1933.

Function of this product has Silicon N-Channel MOS FET.

Manufacturers : Hitachi Semiconductor

Image and pinout :

Some of the text within the PDF file :

2SK1933 Silicon N-Channel MOS FET Application High speed power switching Features • • • • Low on-resistance High speed switching No secondary breakdown Suitable for Switching regulator Outline TO-3P D G 1 2 3 1. Gate 2. Drain (Flange) 3. Source S 2SK1933 Absolute Maximum Ratings (Ta = 25°C) Item Drain to source voltage Gate to source voltage Drain current Drain peak current Body to drain diode reverse drain current Channel dissipation Channel temperature Storage temperature Notes 1. PW ≤ 10 µs, duty cycle ≤ 1 % 2. Value at Tc = 25°C Symbol VDSS VGSS ID I D(pulse)* I DR Pch* Tch Tstg 2 1 Ratings 900 ±30 10 30 10 150 150 –55 to +150 Unit V V A A A W °C °C 2 2SK1933 Electrical Characteristics (Ta = 25°C) Item Drain to source breakdown voltage Gate to source bre [ ... ]

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