This part is a kind of semiconductor called 2SK1930.

Function of this product has Silicon N Channel MOS Type Field Effect Transistor.

Manufacturers : Toshiba Semiconductor

Image and pinout :

Some of the text within the PDF file :

2SK1930 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (π−MOSII.5) 2SK1930 Chopper Regulator, DC−DC Converter, and Motor Drive Applications Unit: mm l Low drain−source ON resistance : RDS (ON) = 3.0 Ω (typ.) l High forward transfer admittance : |Yfs| = 2.0 S (typ.) l Low leakage current : IDSS = 300 µA (max) (VDS = 800 V) l Enhancement−mode : Vth = 1.5~3.5 V (VDS = 10 V, ID = 1 mA) Maximum Ratings (Ta = 25°C) Characteristics Drain−source voltage Drain−gate voltage (RGS = 20 kΩ) Gate−source voltage Drain current DC (Note 1) Pulse (Note 1) Drain power dissipation (Tc = 25°C) Channel temperature Storage temperature range Symbol VDSS VDGR VGSS ID IDP PD Tch Tstg Rating 1000 1000 ±20 4 12 80 150 −55~150 Unit V V V A W °C °C Thermal Characte [ ... ]

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