This part is a kind of semiconductor called 2SK170.

Function of this product has FET/ Silicon N Channel Junction Type(for Low Noise Audio Amplifier).

Manufacturers : Toshiba Semiconductor

Image and pinout :

Some of the text within the PDF file :

TOSHIBA Field Effect Transistor Silicon N Channel Junction Type 2SK170 2SK170 Low Noise Audio Amplifier Applications Unit: mm • Recommended for first stages of EQ and M.C. head amplifiers. • High |Yfs|: |Yfs| = 22 mS (typ.) (VDS = 10 V, VGS = 0, IDSS = 3 mA) • High breakdown voltage: VGDS = −40 V • Low noise: En = 0.95 nV/Hz1/2 (typ.) (VDS = 10 V, ID = 1 mA, f = 1 kHz) • High input impedance: IGSS = −1 nA (max) (VGS = −30 V) Maximum Ratings (Ta = 25°C) Characteristics Gate-drain voltage Gate current Drain power dissipation Junction temperature Storage temperature range Symbol VGDS IG PD Tj Tstg Rating −40 10 400 125 −55~125 Unit V mA mW °C °C Electrical Characteristics (Ta = 25°C) JEDEC TC-92 JEITA SC-43 TOSHIBA 2-5F1D Weight: 0.21 g (typ.) Charact [ ... ]

2SK170 PDF Datasheet Download