This part is a kind of semiconductor called 2SD2012.

Function of this product has Silicon NPN Triple Diffused Type TRANSISTOR.

Manufacturers : Toshiba Semiconductor

Image and pinout :

Some of the text within the PDF file :

TOSHIBA Transistor Silicon NPN Triple Diffused Type 2SD2012 Audio Frequency Power Amplifier Applications 2SD2012 Unit: mm • Low saturation voltage: VCE (sat) = 0.4 V (typ.) (IC = 2A / IB = 0.2A) • High power dissipation: PC = 25 W (Tc = 25°C) Absolute Maximum Ratings (Ta = 25°C) Characteristics Symbol Rating Unit Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current Base current Collector power dissipation Ta = 25°C Tc = 25°C Junction temperature Storage temperature range VCBO VCEO VEBO IC IB PC Tj Tstg 60 60 7 3 0.5 2.0 25 150 −55 to 150 V V V A A W °C °C JEDEC JEITA ― ― Note 1: Using continuously under heavy loads (e.g. the application of high TOSHIBA 2-10R1A temperature/current/voltage and the significant change [ ... ]

2SD2012 PDF Datasheet Download