This part is a kind of semiconductor called MRF9060MBR1.

Function of this product has The RF Sub-micron MOSFET Line RF POWER FIELD EFFECT TRANSISTORS N-channel Enhancement-mode Lateral MOSFETs.

Manufacturers : Motorola

Image and pinout :

Some of the text within the PDF file :

MOTOROLA SEMICONDUCTOR TECHNICAL DATA Order this document by MRF9060M/D The RF Sub–Micron MOSFET Line RF Power Field Effect Transistors N–Channel Enhancement–Mode Lateral MOSFETs Designed for broadband commercial and industrial applications with frequencies up to 1.0 GHz. The high gain and broadband performance of these devices make them ideal for large–signal, common–source amplifier applications in 26 volt base station equipment. • Typical Performance at 945 MHz, 26 Volts Output Power 60 Watts PEP Power Gain 18.0 dB Efficiency 40% (Two Tones) IMD –31.5 dBc • Integrated ESD Protection • Capable of Handling 5:1 VSWR, @ 26 Vdc, 945 MHz, 60 Watts CW Output Power • Excellent Thermal Stability • Characterized with Series Equivalent [ ... ]

MRF9060MBR1 PDF Datasheet Download