This part is a kind of semiconductor called MRF9060LSR1.

Function of this product has RF Power Field Effect Transistors N-Channel Enhancement-Mode Lateral MOSFETs.

Manufacturers : Freescale Semiconductor

Image and pinout :

Some of the text within the PDF file :

Freescale Semiconductor Technical Data MRF9060 Rev. 8, 12/2004 RF Power Field Effect Transistors N−Channel Enhancement−Mode Lateral MOSFETs Designed for broadband commercial and industrial applications with frequencies up to 1000 MHz. The high gain and broadband performance of these devices make them ideal for large−signal, common−source amplifier applications in 26 volt base station equipment. • Typical Two−Tone Performance at 945 MHz, 26 Volts Output Power 60 Watts PEP Power Gain 17 dB Efficiency 40% IMD −31 dBc MRF9060LR1 MRF9060LSR1 • Integrated ESD Protection • Designed for Maximum Gain and Insertion Phase Flatness • Capable of Handling 10:1 VSWR, @ 26 Vdc, 945 MHz, 60 Watts CW Output Power • Excellent Thermal Stability �� [ ... ]

MRF9060LSR1 PDF Datasheet Download