This part is a kind of semiconductor called K1606.

Function of this product has 2SK1606.

Manufacturers : Matsushita Electric

Image and pinout :

Some of the text within the PDF file :

Power F-MOS FETs 2SK1606 Silicon N-Channel Power F-MOS FET s Features q High avalanche energy capacity q VGSS: 30V guaranteed q Low RDS(on), high-speed switching characteristic unit: mm 0.7±0.1 10.0±0.2 5.5±0.2 2.7±0.2 4.2±0.2 4.2±0.2 s Applications 16.7±0.3 7.5±0.2 q High-speed switching (switching power supply) q For high-frequency power amplification φ3.1±0.1 s Absolute Maximum Ratings (TC = 25°C) Parameter Drain to Source breakdown voltage Gate to Source voltage Drain current DC Pulse Symbol VDSS VGSS ID IDP EAS* PD Tch Tstg Ratings 450 ±30 ±8 ±16 130 50 2 150 −55 to +150 Unit V V A A mJ 4.0 1.4±0.1 1.3±0.2 14.0±0.5 Solder Dip 0.5 +0.2 –0.1 0.8±0.1 2.54±0.25 5.08±0.5 Avalanche energy capacity Allowable power dissipation Chann [ ... ]

K1606 PDF Datasheet Download