This part is a kind of semiconductor called AOD4120.
Function of this product has N-Channel Enhancement Mode Field Effect Transistor.
Manufacturers : Freescale
Image and pinout :
Some of the text within the PDF file :
AOD4120 N-Channel Enhancement Mode Field Effect Transistor General Description The AOD4120 uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. This device is suitable for use in PWM, load switching and general purpose applications. Features VDS (V) = 20V ID = 25A (VGS = 10V) RDS(ON) <18 mΩ (VGS = 10V) RDS(ON) <25 mΩ (VGS = 4.5V) RDS(ON) <75 mΩ (VGS = 2.5V) D G S Absolute Maximum Ratings TA=25°C unless otherwise noted Parameter Symbol VDS Drain-Source Voltage VGS Gate-Source Voltage Continuous Drain Current Pulsed Drain Current Avalanche Current C Repetitive avalanche energy L=0.3mH TC=25°C Power Dissipation Power Dissipation B C C Maximum 20 ±16 25 19 75 13 25 33 16.7 2.5 1.7 -55 to 175 Units V V A A mJ W W °C TC=25°C G TC=100°C [ ... ]