This part is a kind of semiconductor called MGF1801.
Function of this product has MICROWAVE POWER GaAs FET.
Manufacturers : Mitsubishi
Image and pinout :
Some of the text within the PDF file :
MITSUBISHI SEMICONDUCTOR GaAs FET MGF1801B MICROWAVE POWER GaAs FET DESCRIPTION The MGF1801B, medium-power GaAs FET with an N-channel Schottky gate, is designed for use in S to X band amplifiers and oscillators. The hermetically sealed metalceramic for microstrip circuits. package assures minimum parasitic losses, and has a configuration suitable OUTLINE DRAWING 4MIN. 1 Unit:millimeters 4MIN. 0.5±0.15 FEATURES • High output power at 1dB gain compression P1dB=23dBm(TYP.) • High linear power gain GLP=9dB(TYP.) • High reliability and stability @f=8GHz 0.5±0.15 3 @f=8GHz 2 2 APPLICATION S to X band medium-power amplifiers and oscillators. 2.5±0.2 QUALITY GRADE • IG RECOMMENDED BIAS CONDITIONS • VDS=6V • ID=100mA • Refer to Bias Procedure 1 GATE 2 SOURCE 3 DRAIN [ ... ]